Abstract
II-VI semiconductor nanostructures exhibit interesting optical properties due to quantum confinement of their charge carriers. Here, we discuss the assembly of nanostructures of , , and using buffer-layer-assisted growth with Xe buffers. Both compact clusters and ramified wires can be synthesized by varying the Xe buffer layer thickness. Analysis of the nanostructure size distributions and densities makes it possible to calculate their diffusion parameters on the desorbing Xe. Clear differences in the effective activation energies for diffusion for , , and can be attributed to differences in London dispersion interactions. Photoluminescence measurements indicate changes from 3D to 2D confinement as compact particles are replaced by ramified wires. Laser power dependent measurements yield the low temperature exciton lifetime, and temperature dependent measurements indicate that optical phonons play a dominant role in the decay of the signal above and defect states play a dominant role below .
- Received 23 December 2005
DOI:https://doi.org/10.1103/PhysRevB.73.125430
©2006 American Physical Society