Effects of Si and Mo additions on glass-forming in FeGaPCB bulk glassy alloys with high saturation magnetization

Baolong Shen, Masahiro Akiba, and Akihisa Inoue
Phys. Rev. B 73, 104204 – Published 20 March 2006

Abstract

We investigated the effect of Si and Mo additions on the glass-forming ability (GFA) of FeMoGaPCBSi alloys. The simultaneous addition of small amounts of Si and Mo was found to be effective for extension of the supercooled liquid region (ΔTx) defined by the difference between glass transition temperature (Tg) and crystallization temperature (Tx). The ΔTx value is 26K for the Fe78Ga2P12C4B4 glassy alloy, and increases to 52 and 50K for the Fe76Mo2Ga2P10C4B4Si2 and Fe74Mo4Ga2P10C4B4Si2 glassy alloys, respectively. Similarly, the ΔTx value is 33K for the Fe77Ga3P12C4B4 glassy alloy, and increases to 60 and 57K for the Fe75Mo2Ga3P10C4B4Si2 and Fe73Mo4Ga3P10C4B4Si2 glassy alloys, respectively. These four glassy alloys also exhibit rather high reduced glass transition temperature (TgTl) of 0.58–0.60. By copper mold casting, bulk glassy alloy rods with the diameters of 1.5 to 2.5mm were prepared. These four glassy alloys also exhibit high saturation magnetization (Is) of 1.111.32T and good soft-magnetic properties, i.e., low coercive force (Hc) of 2.43.3Am, and high effective permeability (μe) at 1kHz of 850014000. The relation between crystallization behavior and GFA was also investigated. It was found that the primary precipitation phase of the FeMoGaPCBSi glassy alloys is a complex fcc (Fe,Mo)23(B,C)6 phase, and the addition of small amounts of Si and Mo is effective for the suppression of precipitation of (Fe,Mo)23(B,C)6 phase, resulting in the extension of ΔTx and the improvement of GFA.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 12 September 2005

DOI:https://doi.org/10.1103/PhysRevB.73.104204

©2006 American Physical Society

Authors & Affiliations

Baolong Shen*, Masahiro Akiba, and Akihisa Inoue

  • Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

  • *Author to whom correspondence should be addressed. Electronic address: shen@imr.tohoku.ac.jp

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 73, Iss. 10 — 1 March 2006

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×