Spectroscopic ellipsometry study of optical anisotropy in Gd5Si2Ge2 and comparison with reflectance difference spectra

J. M. Park, D. W. Lynch, S. J. Lee, D. L. Schlagel, T. A. Lograsso, A. O. Tsokol, J. E. Snyder, and D. C. Jiles
Phys. Rev. B 73, 035110 – Published 9 January 2006

Abstract

The complex dielectric functions of single crystals of Gd5Si2Ge2 were obtained using spectroscopic ellipsometry (SE) in the photon energy range of 1.55.0eV at room temperature. Reflectance difference (RD) spectra for the ab and bc planes of single crystals of Gd5Si2Ge2 were derived from these dielectric functions and compared to those obtained from reflectance difference spectroscopy (RDS) at near-normal incidence. The two experimental RD spectra from SE and RDS agreed well. The in-plane optical anisotropy of the sample is mainly due to intrinsic bulk properties because of its larger magnitude (4×102) compared to surface-induced optical anisotropies, with a magnitude of only about 103 for a typical cubic material.

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  • Received 24 May 2005

DOI:https://doi.org/10.1103/PhysRevB.73.035110

©2006 American Physical Society

Authors & Affiliations

J. M. Park and D. W. Lynch

  • Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA

S. J. Lee, D. L. Schlagel, T. A. Lograsso, and A. O. Tsokol

  • Ames Laboratory, Iowa State University, Ames, Iowa 50011, USA

J. E. Snyder and D. C. Jiles

  • Ames Laboratory and Materials Science and Engineering, Iowa State University, Ames, Iowa 50011, USA

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Vol. 73, Iss. 3 — 15 January 2006

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