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Effect of interface states on spin-dependent tunneling in FeMgOFe tunnel junctions

K. D. Belashchenko, J. Velev, and E. Y. Tsymbal
Phys. Rev. B 72, 140404(R) – Published 12 October 2005

Abstract

The electronic structure and spin-dependent tunneling in epitaxial FeMgOFe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains the experimentally observed decrease in tunneling magnetoresistance (TMR) for thin MgO barriers. We predict that a monolayer of Ag epitaxially deposited at the interface between Fe and MgO suppresses tunneling through the interface band and may thus be used to enhance the TMR for thin barriers.

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  • Received 9 September 2005

DOI:https://doi.org/10.1103/PhysRevB.72.140404

©2005 American Physical Society

Authors & Affiliations

K. D. Belashchenko, J. Velev, and E. Y. Tsymbal

  • Department of Physics and Astronomy and Center for Materials Research and Analysis, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

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Issue

Vol. 72, Iss. 14 — 1 October 2005

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