Oxygen adsorption on Cu(100): First-principles pseudopotential calculations

M. Alatalo, S. Jaatinen, P. Salo, and K. Laasonen
Phys. Rev. B 70, 245417 – Published 15 December 2004

Abstract

We have studied the adsorption characteristics of atomic and molecular oxygen, incident on the Cu(100) surface. Our pseudopotential first-principles calculations yield trajectories for the O2 molecule without dissociation barriers at the entrance channel. We discuss the energetics of the O2 adsorption and dissociation in terms of the elbow plots which are two-dimensional cuts of the full six-dimensional potential-energy surface. The top site is found to be the most reactive one while at the fcc site molecular adsorption takes place. The adsorption energies at horizontal configurations of the O2 molecule are found to be larger than those at the vertical configurations. The local densities of states reveal differences between the sites with direct dissociative adsorption and the ones with molecular precursor states. We also discuss the interactions between O and Cu atoms adsorbed at the hollow sites on Cu(100), and the corresponding diffusion barriers.

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  • Received 26 January 2004

DOI:https://doi.org/10.1103/PhysRevB.70.245417

©2004 American Physical Society

Authors & Affiliations

M. Alatalo

  • Department of Electrical Engineering, Lappeenranta University of Technology, P.O. Box 20, FIN-53851 Lappeenranta, Finland

S. Jaatinen and P. Salo

  • Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland

K. Laasonen

  • Department of Chemistry, University of Oulu, P.O. Box 3000, FIN-90014 University of Oulu, Finland

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Vol. 70, Iss. 24 — 15 December 2004

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