Abstract
Carrier relaxation processes have been investigated in v-groove quantum wires (QWRs) with a large subband separation . Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation measurements; we observe strong emission from the first excited state of the QWR below . This is attributed to reduced intersubband relaxation via phonon scattering between localized states. Theoretical calculations and experimental results indicate that the pinch-off regions, which provide additional two-dimensional confinement for the QWR structure, have a blocking effect on relaxation mechanisms for certain structures within the v groove. Time-resolved PL measurements show that efficient carrier relaxation from excited QWR states into the ground state occurs only at temperatures . Values for the low-temperature radiative lifetimes of the ground- and first excited-state excitons have been obtained ( and , respectively), and their corresponding localization lengths along the wire estimated.
1 More- Received 17 June 2004
DOI:https://doi.org/10.1103/PhysRevB.70.195308
©2004 American Physical Society