Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

N. I. Cade, R. Roshan, M. Hauert, A. C. Maciel, J. F. Ryan, A. Schwarz, Th. Schäpers, and H. Lüth
Phys. Rev. B 70, 195308 – Published 8 November 2004

Abstract

Carrier relaxation processes have been investigated in GaAsAlxGa1xAs v-groove quantum wires (QWRs) with a large subband separation (ΔE46meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation measurements; we observe strong emission from the first excited state of the QWR below 50K. This is attributed to reduced intersubband relaxation via phonon scattering between localized states. Theoretical calculations and experimental results indicate that the pinch-off regions, which provide additional two-dimensional confinement for the QWR structure, have a blocking effect on relaxation mechanisms for certain structures within the v groove. Time-resolved PL measurements show that efficient carrier relaxation from excited QWR states into the ground state occurs only at temperatures 30K. Values for the low-temperature radiative lifetimes of the ground- and first excited-state excitons have been obtained (340ps and 160ps, respectively), and their corresponding localization lengths along the wire estimated.

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  • Received 17 June 2004

DOI:https://doi.org/10.1103/PhysRevB.70.195308

©2004 American Physical Society

Authors & Affiliations

N. I. Cade*, R. Roshan, M. Hauert, A. C. Maciel, and J. F. Ryan

  • Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU, United Kingdom

A. Schwarz, Th. Schäpers, and H. Lüth

  • Institut für Schichten und Grenzflächen, Forschungszentrum, 52425 Jülich, Germany

  • *Current address: NTT Basic Research Laboratories, Atsugi, 243-0198 Japan. Electronic address: ncade@will.brl.ntt.co.jp

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Vol. 70, Iss. 19 — 15 November 2004

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