Charge transport through a single-electron transistor with a mechanically oscillating island

N. M. Chtchelkatchev, W. Belzig, and C. Bruder
Phys. Rev. B 70, 193305 – Published 11 November 2004

Abstract

We consider a single-electron transistor (SET) whose central island is a nanomechanical oscillator. The gate capacitance of the SET depends on the mechanical displacement, thus, the vibrations of the island may influence the transport properties. Harmonic oscillations of the island and thermal vibrations change the transport characteristics in different ways. The changes in the Coulomb blockade oscillations and in the current noise spectral density help to determine in what way the island oscillates, and allow to estimate the amplitude and the frequency of the oscillations.

  • Figure
  • Figure
  • Figure
  • Received 9 August 2004

DOI:https://doi.org/10.1103/PhysRevB.70.193305

©2004 American Physical Society

Authors & Affiliations

N. M. Chtchelkatchev1,2,3, W. Belzig1, and C. Bruder1

  • 1Departement Physik und Astronomie, Universität Basel, Klingelbergstr. 82, 4056 Basel, Switzerland
  • 2L. D. Landau Institute for Theoretical Physics, Russian Academy of Sciences, 117940 Moscow, Russia
  • 3Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk 142092, Moscow Region, Russia

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 70, Iss. 19 — 15 November 2004

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×