Formation and electronic properties of BC3 single-wall nanotubes upon boron substitution of carbon nanotubes

G. G. Fuentes, E. Borowiak-Palen, M. Knupfer, T. Pichler, J. Fink, L. Wirtz, and A. Rubio
Phys. Rev. B 69, 245403 – Published 10 June 2004

Abstract

We report a detailed experimental and theoretical study on the electronic and optical properties of highly boron-substituted (up to 15at.%) single-wall carbon nanotubes. Core-level electron energy-loss spectroscopy reveals that the boron incorporates into the lattice structure of the tubes, transferring 12 hole per boron atom into the carbon derived unoccupied density of states. The charge transfer and the calculated Fermi-energy shift in the doped nanotubes evidence that a simple rigid-band model can be ruled out and that additional effects such as charge localization and doping induced band-structure changes play an important role at this high doping levels. In optical absorption a new peak appears at 0.4eV which is independent of the doping level. Compared to the results from a series of ab initio calculations our results support the selective doping of semiconducting nanotubes and the formation of BC3 nanotubes instead of a homogeneous random boron substitution.

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  • Received 17 November 2003

DOI:https://doi.org/10.1103/PhysRevB.69.245403

©2004 American Physical Society

Authors & Affiliations

G. G. Fuentes, E. Borowiak-Palen, M. Knupfer, T. Pichler, and J. Fink

  • Leibnitz-Institute für Festkörper- und Werkstoffforschung Dresden, P.O. Box 270016, D-01171 Dresden, Germany

L. Wirtz and A. Rubio

  • Department of Material Physics, University of the Basque Country, Centro Mixto CSIC-UPV, and Donostia International Physics Center, Po. Manuel de Lardizabal 4, 20018 San Sebastián, Spain

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Issue

Vol. 69, Iss. 24 — 15 June 2004

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