Abstract
We report a detailed experimental and theoretical study on the electronic and optical properties of highly boron-substituted (up to ) single-wall carbon nanotubes. Core-level electron energy-loss spectroscopy reveals that the boron incorporates into the lattice structure of the tubes, transferring hole per boron atom into the carbon derived unoccupied density of states. The charge transfer and the calculated Fermi-energy shift in the doped nanotubes evidence that a simple rigid-band model can be ruled out and that additional effects such as charge localization and doping induced band-structure changes play an important role at this high doping levels. In optical absorption a new peak appears at which is independent of the doping level. Compared to the results from a series of ab initio calculations our results support the selective doping of semiconducting nanotubes and the formation of nanotubes instead of a homogeneous random boron substitution.
- Received 17 November 2003
DOI:https://doi.org/10.1103/PhysRevB.69.245403
©2004 American Physical Society