Abstract
We report strong room-temperature intersubband absorption in 80 Å strain-compensated double-barrier quantum wells grown on InP substrates. From the multiple Γ-Γ intersubband transitions observed, it is inferred that the electron effective masses and nonparabolicity parameters for the first two subbands differ significantly from each other. For the range the difference in subband parameters results in a change in transition energy of about twice the value calculated for the corresponding GaAs/AlGaAs quantum well.
- Received 22 April 2003
DOI:https://doi.org/10.1103/PhysRevB.69.033303
©2004 American Physical Society