Abstract
First-principles plane-wave pseudopotential calculations were performed to study electronic structures, structural relaxation, and energetics of point defects in Ti-doped Substitutional and interstitial Ti ions with charge compensating intrinsic defects were considered, and their formation energies were evaluated under various atomic chemical potentials. It was found that substitutional ions with charge compensating Al vacancies were most stable in the oxidized condition. In contrast, as oxygen chemical potentials decreased, the formation energy of substitutional decreased to have the smallest value in the relatively reduced conditions. However, in the intermediate range of oxygen potentials, substitutional and exhibited similar formation energies, indicating that these Ti defects can coexist in a particular reduction environment.
- Received 7 August 2003
DOI:https://doi.org/10.1103/PhysRevB.68.214102
©2003 American Physical Society