Abstract
The metallic conductivity of dilute two-dimensional holes in a GaAs heterojunction insulated-gate field-effect transistor with extremely high mobility and large is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter determined from the experiment, however, decreases with increasing for a behavior unexpected from theoretical calculations valid for small
- Received 17 December 2002
DOI:https://doi.org/10.1103/PhysRevB.68.165308
©2003 American Physical Society