Abstract
We predict theoretically the wetting conditions for the layer-by-layer growth of thin (STO) films on Si. The result is in agreement with our recent experiments. The state of the art band offset calculations identify two different possibilities for the band alignment at the Si-STO interface. A very small conduction band offset is predicted for the structure without the chemically induced localization at the interface, and a 0.9 eV conduction band offset is predicted for the structure with chemically induced localized interface states.
- Received 13 May 2003
DOI:https://doi.org/10.1103/PhysRevB.68.125323
©2003 American Physical Society