Thermoelectric power, Hall effect, and mobility of n-type BaTiO3

T. Kolodiazhnyi, A. Petric, M. Niewczas, C. Bridges, A. Safa-Sefat, and J. E. Greedan
Phys. Rev. B 68, 085205 – Published 15 August 2003
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Abstract

The resistivity and the Hall and Seebeck effects of polycrystalline n-type Ba0.996Y0.004TiO3 and undoped, reduced single crystal BaTiO3 were studied in the 100–300 K interval. Both Hall coefficient and resistivity showed similar temperature activated dependence for the single crystal in the rhombohedral phase and for the polycrystal in the rhombohedral and orthorhombic phases. Low-temperature Hall mobility in the BaTiO3 single crystal decreased from 12cm2V1s1 at 120 K to 2cm2V1s1 at 220 K, implying a phonon scattering of charge carriers. The temperature dependence of the Hall mobility of the polycrystal showed a weak temperature dependence in the 100–220 K range with a maximum of 1.2±0.3cm2V1s1 at 170 K, probably indicating a transition from ionized impurity scattering at low temperature to a phonon scattering at higher temperatures. Temperature dependence of thermopower and Hall coefficient confirmed that the increase in conductivity of the single crystal below 200 K was caused by an increase in the concentration of the charge carriers. The results suggest that below 300 K, electron transport in BaTiO3 occurs via the conduction band rather than by a small polaron hopping.

  • Received 17 December 2002

DOI:https://doi.org/10.1103/PhysRevB.68.085205

©2003 American Physical Society

Authors & Affiliations

T. Kolodiazhnyi*, A. Petric, and M. Niewczas

  • Department of Materials Science & Engineering, McMaster University, Hamilton, Ontario L8S 4L7, Canada

C. Bridges

  • Department of Chemistry, University of Liverpool, Liverpool L69 3BX, United Kingdom

A. Safa-Sefat and J. E. Greedan

  • Department of Chemistry, McMaster University, Hamilton, Ontario L8S 4L7, Canada

  • *Author to whom correspondence should be addressed. Electronic address: koloditv@mcmaster.ca

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Vol. 68, Iss. 8 — 15 August 2003

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