Light-induced coloration and transformation process in PWO4 crystals and the effects of the defect pair VPbVO

Qiren Zhang, Tingyu Liu, Jun Chen, and Xiqi Feng
Phys. Rev. B 68, 064101 – Published 1 August 2003
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Abstract

The optical absorption spectrum of the as-grown PWO4 crystal mainly exhibits a weak band peaking at 350 nm, overlapping with the absorption edge of the crystal. The ultraviolet-irradiated crystal emits a strong band peaking at 420 nm and a broad band in the range of 500–700 nm almost in pairs along with a decreasing of the 350-nm band. It is found that the 420- and 500–700-nm bands can be reduced, with a reirradiation of the 411-nm monochromatic light, while the 350-nm band is strengthened simultaneously. In this paper the mechanism is studied. It is demonstrated that the increasing and/or decreasing of both the 420-nm band and the 500–700-nm band are caused by the creation and/or the annihilation of VPb2 and VO2+, respectively. The creation and annihilation of VPb2 and VO2+ are found to be related to the separation and recombination of the vacancy pair VPb2VO2+, which plays an important role in the formation and transformation process of light induced color centers in the PWO crystal.

  • Received 30 October 2002

DOI:https://doi.org/10.1103/PhysRevB.68.064101

©2003 American Physical Society

Authors & Affiliations

Qiren Zhang, Tingyu Liu, and Jun Chen

  • College of Science, The University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093, People’s Republic of China

Xiqi Feng

  • Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, People’s Republic of China

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Vol. 68, Iss. 6 — 1 August 2003

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