Piezoelectric effect on the optical phonon modes of strained cubic semiconductors: Case of CdTe quantum wells

V. C. Stergiou, N. T. Pelekanos, and Y. S. Raptis
Phys. Rev. B 67, 165304 – Published 3 April 2003
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Abstract

We report on Raman experiments of uniaxially stressed bulk CdTe and strained CdTe/CdZn(Mn)Te [001] and [111] quantum wells, which allowed us to determine the strain and piezoelectric field phonon deformation potentials (PDP’s) for the LO phonons in CdTe. Several PDP’s for the CdTe TO phonons have been extracted as well. We demonstrate that the piezoelectric effect on the phonon frequencies brings in a non-negligible correction, which should be taken into account in all strain-characterization Raman experiments on piezoelectric nanostructures. Examples on the piezoelectric-field induced phonon shifts are given for TO and LO phonons of low-symmetry grown ([111], [211], [311]) strained quantum wells of CdTe.

  • Received 23 July 2002

DOI:https://doi.org/10.1103/PhysRevB.67.165304

©2003 American Physical Society

Authors & Affiliations

V. C. Stergiou1, N. T. Pelekanos2, and Y. S. Raptis1,*

  • 1Physics Department, School of Applied Mathematical and Physical Sciences, National Technical University, GR 157 80, Athens, Hellas
  • 2Département de Recherche Fondamentale sur la Matière Condensée, CEA/Grenoble, SP2M, F-38054 Grenoble, FranceMicroelectronics Research Group, FORTH/IESL, P.O. Box 1527, GR 711 10, Heraklion, Crete, Hellas

  • *Corresponding author. Electronic address: yraptis@central.ntua.gr

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Vol. 67, Iss. 16 — 15 April 2003

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