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Few-electron quantum dot circuit with integrated charge read out

J. M. Elzerman, R. Hanson, J. S. Greidanus, L. H. Willems van Beveren, S. De Franceschi, L. M. K. Vandersypen, S. Tarucha, and L. P. Kouwenhoven
Phys. Rev. B 67, 161308(R) – Published 30 April 2003
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Abstract

We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts are placed in the vicinity of the double quantum dot and serve as charge detectors. These enable determination of the number of conduction electrons on each dot. This number can be reduced to zero, while still allowing transport measurements through the double dot. Microwave radiation is used to pump an electron from one dot to the other by absorption of a single photon. The experiments demonstrate that this quantum dot circuit can serve as a good starting point for a scalable spin-qubit system.

  • Received 6 February 2003

DOI:https://doi.org/10.1103/PhysRevB.67.161308

©2003 American Physical Society

Authors & Affiliations

J. M. Elzerman1, R. Hanson1, J. S. Greidanus1, L. H. Willems van Beveren1, S. De Franceschi1, L. M. K. Vandersypen1, S. Tarucha2,3, and L. P. Kouwenhoven1

  • 1Department of NanoScience and ERATO Mesoscopic Correlation Project, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
  • 2NTT Basic Research Laboratories, Atsugi-shi, Kanagawa 243-0129, Japan
  • 3ERATO Mesoscopic Correlation Project, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan

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Vol. 67, Iss. 16 — 15 April 2003

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