Abstract
Shubnikov–de-Haas oscillation is observed in a polarization-doped three-dimensional electron slab in a graded semiconductor layer. The electron slab is generated by the technique of grading the polar semiconductor alloy with spatially changing polarization. Temperature-dependent oscillations allow us to extract an effective mass of The quantum scattering time measured is close to the transport scattering time indicating the dominance of short-range scattering. Alloy scattering is determined to be the dominant mechanism-limiting mobility; this enables us to extract an alloy-scattering parameter of for the material system. Polarization-doping presents an exciting technique for creating electron slabs with widely tunable density and confinement for the study of dimensionality effects on charge transport and collective phenomena.
- Received 15 October 2002
DOI:https://doi.org/10.1103/PhysRevB.67.153306
©2003 American Physical Society