Abstract
Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum-dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics.
- Received 31 July 2002
DOI:https://doi.org/10.1103/PhysRevB.67.121301
©2003 American Physical Society