Abstract
Using reflection electron microscopy we examine the step fluctuations of Si(111) at Evaporation is compensated by a replenishing flux. The step fluctuation behavior is qualitatively similar to that at (where sublimation is negligible), with unexplained quantitative differences. We focus on the three parameters of the step continuum model of vicinals. The step stiffness scales with an increase in T from as predicted by an appropriate lattice model. The kinetic coefficient is larger than scaling of the parameters from would predict. The step-step correlations are assessed in traditional and novel ways; step repulsions are at least 6 times as strong as predicted from lower temperatures, suggesting nonequilibrium effects probably due to electromigration.
- Received 18 March 2002
DOI:https://doi.org/10.1103/PhysRevB.66.115310
©2002 American Physical Society