Angle-resolved photoemission study of Ga1xMnxAs

J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, and M. Tanaka
Phys. Rev. B 64, 125304 – Published 6 September 2001
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Abstract

Valence-band dispersions in Ga1xMnxAs along the ΓΔX line (k[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.

  • Received 8 August 2000

DOI:https://doi.org/10.1103/PhysRevB.64.125304

©2001 American Physical Society

Authors & Affiliations

J. Okabayashi1, A. Kimura2, O. Rader3, T. Mizokawa1, A. Fujimori1, T. Hayashi4, and M. Tanaka4

  • 1Department of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Department of Solid State Physics, Hiroshima University, Higashi, Hiroshima 739-8526, Japan
  • 3BESSY, Albert-Einstein-Strasse 15, D-12489 Berlin, Germany
  • 4Department of Electronic Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan

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Issue

Vol. 64, Iss. 12 — 15 September 2001

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