Abstract
Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) and surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.
- Received 21 December 2000
DOI:https://doi.org/10.1103/PhysRevB.63.235307
©2001 American Physical Society