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Transport properties in doped Mott insulator epitaxial La1yTiO3+δ thin films

S. Gariglio, J. W. Seo, J. Fompeyrine, J.-P. Locquet, and J.-M. Triscone
Phys. Rev. B 63, 161103(R) – Published 6 April 2001
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Abstract

We report on the transport properties, Hall effect and resistivity, of epitaxial La1yTiO3+δ thin films. The materials, grown by molecular beam epitaxy, display a temperature independent Hall coefficient and a characteristic T2 dependence of the resistivity over a wide temperature range, extending from a few Kelvin to 500 K. These transport properties are shown to be consistent with small polaron metallic conduction with a dominant optical phonon mode whose energy, ħω0=80 K, is characteristic of the tilt/rotation of the oxygen octahedra in perovskite materials.

  • Received 8 December 2000

DOI:https://doi.org/10.1103/PhysRevB.63.161103

©2001 American Physical Society

Authors & Affiliations

S. Gariglio1,2, J. W. Seo3,2, J. Fompeyrine2, J.-P. Locquet2, and J.-M. Triscone1

  • 1DPMC, University of Geneva, 24 Quai E.-Ansermet, 1211 Geneva 4, Switzerland
  • 2IBM Research Laboratories, 4 Säumerstrasse, 8804 Rüschlikon, Switzerland
  • 3Institut de Physique, University of Neuchâtel, 2000 Neuchâtel, Switzerland

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Issue

Vol. 63, Iss. 16 — 15 April 2001

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