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Phase transitions and strain-induced ferroelectricity in SrTiO3 epitaxial thin films

N. A. Pertsev, A. K. Tagantsev, and N. Setter
Phys. Rev. B 61, R825(R) – Published 1 January 2000; Erratum Phys. Rev. B 65, 219901 (2002)
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Abstract

A Landau-Ginsburg-Devonshire-type theory is used to describe the mechanical substrate effect on equilibrium states and phase transitions in SrTiO3 epitaxial thin films. The misfit strain-temperature phase diagram of SrTiO3 films is developed taking into account the existence of two coupled instabilities (antiferrodistortive and ferroelectric) in this crystal. It is shown that SrTiO3 films remain paraelectric down to 0 K only in a narrow range of small negative misfit strains between 2×103 and 2.2×104. Outside this “paraelectric gap,” the 2D clamping and straining of the film by the substrate leads to the appearance of ferroelectricity in SrTiO3 films. The temperature of the ferroelectric transition increases rapidly outside the aforementioned misfit strain range.

  • Received 2 July 1999

DOI:https://doi.org/10.1103/PhysRevB.61.R825

©2000 American Physical Society

Erratum

Authors & Affiliations

N. A. Pertsev*, A. K. Tagantsev, and N. Setter

  • Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, Lausanne CH 1015, Switzerland

  • *Permanent address: A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia. Electronic address: pertsev@domain.ioffe.rssi.ru

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Vol. 61, Iss. 2 — 1 January 2000

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