Abstract
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to possibly related to spin-orbit interactions.
- Received 15 October 1999
DOI:https://doi.org/10.1103/PhysRevB.61.R5082
©2000 American Physical Society