Abstract
The dependence of the spin-orbit interaction on electron density in inversion layers of metal-oxide-semiconductor field-effect transistors on p-type InAs is studied by magnetotransport at liquid-helium temperatures. We observe beating patterns in the Shubnikov–de Haas oscillations, which manifest the Rashba effect in a triangular surface potential. Taking subband nonparabolicity into account we evaluate Rashba parameters that increase with electron density reaching a value at densities Implications for the spin-dependent transport in spin-polarized high-electron-mobility transistors utilizing InAs quantum wells are discussed.
- Received 29 October 1999
DOI:https://doi.org/10.1103/PhysRevB.61.15588
©2000 American Physical Society