Abstract
Thermal and radiation-enhanced diffusion in thin films of the order-disorder alloy have been analyzed above and below the transition temperature. It is demonstrated that thin films grown by molecular beam epitaxy are uniquely suited for such experiments as the surface provides a dominant and well-characterized sink for migrating defects. The analysis is applied to recent experiments. Quantitative predictions of radiation-enhanced diffusion agree closely with experimental values. Analysis of the tracer-impurity thermal diffusion experiments provide host diffusion coefficients in a temperature regime through the transition temperature which were heretofore unavailable.
- Received 12 October 1998
DOI:https://doi.org/10.1103/PhysRevB.60.881
©1999 American Physical Society