Magneto-optics of the spatially separated electron and hole layers in GaAs/AlxGa1xAs coupled quantum wells

L. V. Butov, A. A. Shashkin, V. T. Dolgopolov, K. L. Campman, and A. C. Gossard
Phys. Rev. B 60, 8753 – Published 15 September 1999
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Abstract

We report on the magneto-optical study of the spatially separated electron and hole layers in GaAs/AlxGa1xAs coupled quantum wells at low temperatures T>~50mK and high magnetic fields B<~16T. At high magnetic fields cusps are observed in the energy and intensity of the indirect (interwell) exciton photoluminescence. We tentatively attribute these to the commensurability effects of the magnetoexciton with island structures in the sample. The indirect exciton lifetime is found to increase with magnetic field. The increase is attributed to the reduction of indirect exciton localization area caused by the increase of the magnetoexciton mass. The indirect exciton photoluminescence energy is found to enhance with density, which reflects the net repulsive interaction between indirect excitons.

  • Received 24 February 1999

DOI:https://doi.org/10.1103/PhysRevB.60.8753

©1999 American Physical Society

Authors & Affiliations

L. V. Butov

  • Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow district, Russia
  • Department of Electrical and Computer Engineering and Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106-9560

A. A. Shashkin and V. T. Dolgopolov

  • Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow district, Russia

K. L. Campman and A. C. Gossard

  • Department of Electrical and Computer Engineering and Center for Quantized Electronic Structures (QUEST), University of California, Santa Barbara, California 93106-9560

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Vol. 60, Iss. 12 — 15 September 1999

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