Density dependence of carrier-carrier-induced intersubband scattering in GaAs/AlxGa1xAs quantum wells

M. Hartig, J. D. Ganière, P. E. Selbmann, B. Deveaud, and L. Rota
Phys. Rev. B 60, 1500 – Published 15 July 1999
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Abstract

Photoluminescence lifetimes of the n=2 level in a large quantum well show a clear nonmonotonic dependence on the density of optically generated carriers. Varying the power density over five orders of magnitude we prove directly the high efficiency of carrier-carrier interaction for intersubband scattering when longitudinal-optical phonon emission is suppressed. For low densities, the observed n=2 decay times get shorter (from 40 down to 5 ps) as the density is increased. At high densities Pauli blocking reduces significantly the intersubband scattering rates.

  • Received 22 June 1998

DOI:https://doi.org/10.1103/PhysRevB.60.1500

©1999 American Physical Society

Authors & Affiliations

M. Hartig, J. D. Ganière, P. E. Selbmann, and B. Deveaud

  • Physics Department, Institute of Micro and Optoelectronics, Swiss Federal Institute of Technology-EPFL, 1015 Lausanne, Switzerland

L. Rota

  • Ecce, 42019 Scandino, Italy

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Vol. 60, Iss. 3 — 15 July 1999

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