Abstract
The advantages of scanning tunneling microscopy for the determination of the composition of the submonolayer metal/silicon interfaces has been demonstrated using Si(100)4×3-In and Si(111)4×1-In as sample reconstructions. It has been found that the Si(100)4×3-In unit cell is built of 7 In atoms and 6 Si atoms, while the Si(111)4×1-In unit cell contains 3 In atoms and 2 Si atoms in addition to the top Si(111) bilayer. The obtained quantitative information provides the ground for discussion of the plausible atomic arrangement of these reconstructions.
- Received 2 October 1998
DOI:https://doi.org/10.1103/PhysRevB.60.14372
©1999 American Physical Society