Competition between initial- and final-state effects in valence- and core-level x-ray photoemission of Sb-doped SnO2

R. G. Egdell, J. Rebane, T. J. Walker, and D. S. L. Law
Phys. Rev. B 59, 1792 – Published 15 January 1999
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Abstract

High resolution valence- and core-level photoemission spectra of undoped and 3% Sb-doped SnO2 are presented. Conduction-band occupation due to Sb doping in SnO2 leads to a shift of valence-band features to high binding energy. However, the shift is less than the width of the occupied part of the conduction band. This is attributed to a shrinkage of the bulk band gap with doping, arising from an attractive dopant electron interaction and screening of the Coulomb repulsion between valence and conduction electrons. Core-level spectra provide evidence for strong screening by the conduction electron gas in 3% Sb-doped SnO2, giving rise to “screened” and “unscreened” final-state peaks in photoemission. The dominant screening response involves excitation of conduction electron plasmons.

  • Received 20 July 1998

DOI:https://doi.org/10.1103/PhysRevB.59.1792

©1999 American Physical Society

Authors & Affiliations

R. G. Egdell*, J. Rebane, and T. J. Walker

  • Inorganic Chemistry Laboratory, South Parks Road, Oxford OX1 3QR, United Kingdom

D. S. L. Law

  • Research Unit for Surfaces Transforms and Interfaces, Daresbury Laboratory, Warrington, Cheshire WA4 4AD, United Kingdom

  • *Author for correspondence. Electronic address: russ.egdell @chem.ox.ac.uk
  • On leave from Department of Inorganic Chemistry, Moscow State University, Russia.

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Vol. 59, Iss. 3 — 15 January 1999

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