Direct observation of above-quantum-step quasibound states in GaAs/AlxGa1xAs/vacuum heterostructures

W. Lu, Y. M. Mu, X. Q. Liu, X. S. Chen, M. F. Wan, G. L. Shi, Y. M. Qiao, S. C. Shen, Y. Fu, and M. Willander
Phys. Rev. B 57, 9787 – Published 15 April 1998
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Abstract

In this paper we demonstrate the existence of above-quantum-step quasibound states in GaAs/Al0.24Ga0.76As/vacuum double heterostructures using a modulated photoreflection spectroscopy technique at room temperature. A series of clearly resolved structures was found in the spectra. Their energy positions agree well with those of transitions between quasibound states in the state density of the heteorostructure. Further envelope wave-function analysis indicates that these quasibound states mainly center in the GaAs/Al0.24Ga0.76As quantum-step region, and are found to be affected by the limited length of electron coherence.

  • Received 18 August 1997

DOI:https://doi.org/10.1103/PhysRevB.57.9787

©1998 American Physical Society

Authors & Affiliations

W. Lu, Y. M. Mu, X. Q. Liu, X. S. Chen, M. F. Wan, G. L. Shi, Y. M. Qiao, and S. C. Shen

  • National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 420 Zhong Shan Bei Yi Road, Shanghai 200083, China

Y. Fu and M. Willander

  • Physical Electronics and Photonics, Department of Physics, Fysikgränd 3, University of Göteborg and Chalmers University of Technology, S-412 96 Göteborg, Sweden

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Issue

Vol. 57, Iss. 16 — 15 April 1998

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