Observation of direct and phonon-assisted indirect transitions in GaAs/GaxAl1xAs multiquantum wells under hydrostatic pressure

N. Dai, D. Huang, X. Q. Liu, Y. M. Mu, W. Lu, and S. C. Shen
Phys. Rev. B 57, 6566 – Published 15 March 1998
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Abstract

Using photomodulated transmission spectroscopy we investigated the interband transitions in GaAs/Ga1xAlxAs multiquantum wells as a function of hydrostatic pressure up to 50 kilobar. A number of spectral structures, associated with the Γ, L, and X critical points in GaAs wells and Ga1xAlxAs barriers were observed, and calculations were performed to help understanding their origins. The pressure coefficients of the direct transitions in the quantum wells fall between those of GaAs and Ga1xAlxAs bulk. The observation of phonon-assisted indirect transitions is made easy by photomodulated transmission technique, and by the band folding effect in the multiple-quantum-well systems. The indirect transitions derived from the L conduction subbands and Γ valence subbands have been observed in wide pressure ranges.

  • Received 4 June 1997

DOI:https://doi.org/10.1103/PhysRevB.57.6566

©1998 American Physical Society

Authors & Affiliations

N. Dai and D. Huang

  • National Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China
  • T. D. Lee Laboratory, Department of Physics, Fudan University, Shanghai 200433, People’s Republic of China

X. Q. Liu, Y. M. Mu, W. Lu, and S. C. Shen

  • National Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People’s Republic of China

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Vol. 57, Iss. 11 — 15 March 1998

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