Nonlinear photoluminescence in GaAs/AlxGa1xAs quantum wells

T. Baars and M. Gal
Phys. Rev. B 57, 3974 – Published 15 February 1998
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Abstract

We have measured the nonlinear photoluminescence (PL) spectra of GaAs/AlxGa1xAs quantum wells at low temperatures using a continuous wave technique that is based on low-power excitation and phase-locked detection. For nonresonant excitation we find a significant change of the emission energy and linewidth with increasing excitation intensity. We attribute the energy shift to the optical modulation of the internal electric fields that results in the modulation of the exciton energy via the quantum confined Stark effect, while the line broadening is due to the interaction of excitons with free carriers.

  • Received 4 June 1997

DOI:https://doi.org/10.1103/PhysRevB.57.3974

©1998 American Physical Society

Authors & Affiliations

T. Baars* and M. Gal

  • School of Physics, The University of New South Wales, Sydney, 2052 Australia

  • *Present address: Technische Physik, University of Würzburg, Am Hubland, 97074 Würzburg, Germany.

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Vol. 57, Iss. 7 — 15 February 1998

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