Angle-resolved photoelectron spectroscopy study of the $\mathrm{InP}\mathrm{}\left(100\right)-(2\mathrm{}\times 4)$ surface electronic structure

The $\mathrm{InP}\mathrm{}\left(100\right)-(2\mathrm{}\times 4)$ surface electronic structure was studied using angle-resolved photoelectron spectroscopy together with synchrotron radiation. We identify three surface states occurring in the gaps of the projected bulk bands. The highest level state, located at binding energy $E_B=1.0\mathrm{}\mathrm{eV},$ is consistent with previous findings. The second and third states, located at $E_B=1.8\mathrm{}$ and 4.3 eV, have not been reported previously. All three of these surface states show no discernible dispersion as compared to the surface states on $\mathrm{InAs}\mathrm{}\left(100\right)-(2\mathrm{}\times 4)$ and $\mathrm{GaAs}\mathrm{}\left(100\right)-(2\mathrm{}\times 4).$ This result suggests that the elements of the $\mathrm{InP}\mathrm{}\left(100\right)-(2\mathrm{}\times 4)$ surface unit cells are more isolated from each other than they are for the $\mathrm{InAs}\mathrm{}\left(100\right)-(2\mathrm{}\times 4)$ or the $\mathrm{GaAs}\mathrm{}\left(100\right)-(2\mathrm{}\times 4)$ surface.