Abstract
The trapping and thermal emission of holes were studied from a deep acceptor level created during thermal annealing of a Te (x=0.12) crystal grown by the high-pressure Bridgman (HPB) technique using thermoelectric-effect spectroscopy and thermally stimulated current experiments. The deep level, which is usually absent in as-grown HPB Te crystals, is assigned to the 2-/- acceptor level of Cd (Zn) vacancies. The thermal ionization energy of the level is =(0.43±0.01) eV, and the trapping cross section of holes was found to be σ=(2.0±0.2)× .
DOI:https://doi.org/10.1103/PhysRevB.55.6945
©1997 American Physical Society