Abstract
The photoacoustic effect is investigated as a function of the modulation frequency in a transmission detection configuration for semiconductor samples. The theoretical model for this configuration is given for the thermal and elastic processes besides the carrier-transport characteristics. The dependence of the photoacoustic effect on thermodiffusion, thermoelastic, and electronic-transport parameters is identified. The experimental photoacoustic data for Si samples are tested and they exhibit satisfactory agreement with the theoretical model.
DOI:https://doi.org/10.1103/PhysRevB.55.15631
©1997 American Physical Society