Hydrogen diffusion on Si(001)

J. H. G. Owen, D. R. Bowler, C. M. Goringe, K. Miki, and G. A. D. Briggs
Phys. Rev. B 54, 14153 – Published 15 November 1996
PDFExport Citation

Abstract

We have imaged hydrogen on Si(001) at low coverages in a variable-temperature STM from 300 K up to 700 K. Individual hydrogen atoms were imaged which became mobile at around 570 K. The observed rate of hopping along the dimer rows was consistent with an activation energy of 1.68 ± 0.15 eV. Motion across dimer rows was rarely observed, even at the higher temperatures. The diffusion barrier for motion along the dimer rows has been calculated using tight-binding and density-functional theory in the generalized gradient approximation (GGA). The calculated barrier is 1.65 eV from tight binding and 1.51 eV from GGA. © 1996 The American Physical Society.

  • Received 22 May 1996

DOI:https://doi.org/10.1103/PhysRevB.54.14153

©1996 American Physical Society

Authors & Affiliations

J. H. G. Owen, D. R. Bowler, C. M. Goringe, K. Miki, and G. A. D. Briggs

  • Department of Materials, Oxford University, Parks Road, Oxford OX1 3PH, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 54, Iss. 19 — 15 November 1996

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×