Abstract
The recombination processes in an n-type Se/ quantum well are investigated by time-resolved photoluminescence measurements. The combined analysis of the luminescence decay time and intensity yields the temperature dependence of the radiative and nonradiative recombination time. The quantum efficiency at a low temperature of 8 K is close to unity and the nonradiative recombination rate increases as the temperature is raised. The large effective radiative recombination coefficient of 1.4× /s at 300 K is attributed to excitonic enhancement, even at 300 K. © 1996 The American Physical Society.
- Received 23 October 1995
DOI:https://doi.org/10.1103/PhysRevB.53.4722
©1996 American Physical Society