Resonant photoelectron spectroscopy on NiO

O. Tjernberg, S. Söderholm, U. O. Karlsson, G. Chiaia, M. Qvarford, H. Nylén, and I. Lindau
Phys. Rev. B 53, 10372 – Published 15 April 1996
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Abstract

Resonant photoelectron spectroscopy studies have been performed on the NiO valence band at photon energies corresponding to the Ni 2p,3p,and O 1s absorption thresholds. Strong resonances are seen in the vicinity of the Ni 2p threshold, which confirm earlier conclusions from the weaker resonances seen at the Ni 3p threshold. No valence-band resonance is observed at the O 1s threshold. The analysis of this data confirms the picture of NiO as a strongly correlated charge-transfer insulator by identifying the highest-lying states as being of mainly 3d8L final-state character. The existence of localized excited Ni states, as well as the delocalized nature of the O states, are confirmed. Comparisons with the configuration-interaction model and quasiparticle calculations are also made.

  • Received 20 September 1995

DOI:https://doi.org/10.1103/PhysRevB.53.10372

©1996 American Physical Society

Authors & Affiliations

O. Tjernberg, S. Söderholm, and U. O. Karlsson

  • Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

G. Chiaia*, M. Qvarford, H. Nylén, and I. Lindau

  • Department of Synchrotron Radiation Research, Institute of Physics, Lund University, Sölvegatan 14, S-223 62 Lund, Sweden

  • *Present address: Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden.

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Vol. 53, Iss. 15 — 15 April 1996

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