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Edge of the two-dimensional electron gas in a gated heterostructure

Ivan A. Larkin and John H. Davies
Phys. Rev. B 52, R5535(R) – Published 15 August 1995
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Abstract

We describe a quantitative electrostatic theory of the two-dimensional electron gas (2DEG) confined by a semi-infinite gate. It includes the finite depth of the 2DEG below the surface of a heterostructure, which enables us to treat the whole range of gate voltages. Two models are used for the boundary condition on the free surface, with either pinned potential or frozen charge. Our results predict the position and width of the strips of incompressible liquid in the quantum Hall regime, and are in good agreement with recent experiments.

  • Received 11 May 1995

DOI:https://doi.org/10.1103/PhysRevB.52.R5535

©1995 American Physical Society

Authors & Affiliations

Ivan A. Larkin and John H. Davies

  • Department of Electronics and Electrical Engineering, Glasgow University, Glasgow, G12 8QQ, United Kingdom

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Issue

Vol. 52, Iss. 8 — 15 August 1995

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