Abstract
We report the partial fluorination of a H-passivated, sputtered Si(111) surface at 35 K induced by irradiating a physisorbed carbon tetrafluoride overlayer with 2–13 eV electrons. The reaction cross section depends strongly on the energy of incoming electrons with a threshold at 4.0 eV and a clear resonance peak at 6.0 eV having a maximum value of 4.8× , which is attributed to dissociative electron attachment (DEA) to . Our study demonstrates the energetic selectivity of DEA for chemically modifying a semiconductor surface.
- Received 12 June 1995
DOI:https://doi.org/10.1103/PhysRevB.52.16618
©1995 American Physical Society