Abstract
We report low-temperature time-resolved photoluminescence experiments on a pseudomorphic SiGe quantum-well structure. Under the condition of optical absorption in the Si buffer layers, the decay time of the SiGe quantum-well luminescence is controlled by the capture of excitons and electron-hole droplets. From the onset of the SiGe luminescence, the exciton lifetime in the investigated 59-Å-wide quantum wells is found to be about 100 ns.
- Received 12 June 1995
DOI:https://doi.org/10.1103/PhysRevB.52.16608
©1995 American Physical Society