Capacitive nature of atomic-sized structures

G. J. Iafrate, K. Hess, J. B. Krieger, and M. Macucci
Phys. Rev. B 52, 10737 – Published 15 October 1995
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Abstract

The capacitance of an N-electron system is established by deriving the atomistic connection between the capacitive energy, the ionization potential, and the electron affinity of the charged system; it is shown further that this connection leads to the linkage of the capacitive energy to the difference between the lowest unoccupied and the highest occupied Kohn-Sham orbital energies of the system. An illustrative example is used to show explicitly the microscopic behavior of the derived capacitance for a finite electron system, and to discuss the tendency of the derived capacitance to limit toward the classical electrostatic capacitance as the system becomes macroscopically large. Discussions relevant to atomic and molecular systems are included.

  • Received 27 January 1995

DOI:https://doi.org/10.1103/PhysRevB.52.10737

©1995 American Physical Society

Authors & Affiliations

G. J. Iafrate

  • U.S. Army Research Office, Research Triangle Park, North Carolina 27709-2211

K. Hess

  • Beckman Institute, University of Illinois, 405 North Mathews Avenue, Urbana, Illinois 61801

J. B. Krieger

  • Brooklyn College, City University of New York, Brooklyn, New York 11210

M. Macucci

  • Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Diotisalvi, 2, I-56126 Pisa, Italy

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Vol. 52, Iss. 15 — 15 October 1995

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