Abstract
We have studied the influence of strong electric fields on the Raman scattering intensity from LO phonons in GaAs (100) at room temperature using laser excitation energies above the fundamental gap. Striking oscillations are found in the scattering intensity for configurations where either the deformation potential or Fröhlich electron-phonon interaction contribute. The oscillations in the deformation-potential-mediated scattering intensity can be related to Franz-Keldysh oscillations derived from the gap, whereas a more complicated mechanism has to be invoked for processes where Fröhlich interaction is responsible.
- Received 2 December 1994
DOI:https://doi.org/10.1103/PhysRevB.51.7353
©1995 American Physical Society