Abstract
We report the observation of thermally activated exchange coupling across amorphous germanium barriers. At T=50 K the coupling persists up to =60 Å. Heat input reversibly enhances the coupling strength. The exchange across a-Ge always is ferromagnetic. Experiments with Ge/Si heterostructures show that the occurrence of antiferromagnetic coupling requires the presence of some a-Si in the barrier and a total spacer thickness of ∼20 Å. Results indicate that the density of defect states determines the nature of the coupling through amorphous semiconductors.
- Received 30 November 1994
DOI:https://doi.org/10.1103/PhysRevB.51.7303
©1995 American Physical Society