Surface premelting in Al(110) observed by core-level photoemission

W. Theis and K. Horn
Phys. Rev. B 51, 7157 – Published 15 March 1995
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Abstract

Surface premelting has been observed on Al(110) by recording Al 2p core-level photoemission at temperatures from T=80 K up to 1 K below the Al bulk melting point (TM=933.5 K). By comparing spectra from Al(110) and Al(111) surfaces and from liquid aluminum the growth of a quasiliquid layer is established. The thickness of the layer is found to grow logarithmically with temperature, commencing at 150 K below the melting point, with a thickness of about 8 ML at 1 K below TM. The degree of local structure and density of the quasiliquid layer are determined to be identical to those of liquid aluminum.

  • Received 11 July 1994

DOI:https://doi.org/10.1103/PhysRevB.51.7157

©1995 American Physical Society

Authors & Affiliations

W. Theis and K. Horn

  • Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany

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Issue

Vol. 51, Iss. 11 — 15 March 1995

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