Abstract
A model is proposed for the pressure dependence of based on the inverted parabolic relationship between and the hole carrier density n that takes into account the fact that drops to zero for a minimum value or a maximum value of n. The models proposed previously by Almasan et al. and Neumeier and Zimmermann are recovered, and are shown to be quite similar. Detailed calculations for superconductors show that one can obtain large enhancements in under pressure in materials that are highly underdoped, or have relatively modest rates of pressure-induced charge transfers. On the other hand, enhancements in compounds which are near optimum doping or which have large rates of pressure-induced charge transfers are found to be quite modest.
- Received 12 December 1994
DOI:https://doi.org/10.1103/PhysRevB.51.11760
©1995 American Physical Society