Low-temperature properties of ε-FeSi from ab initio band theory

T. Jarlborg
Phys. Rev. B 51, 11106 – Published 15 April 1995
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Abstract

Local-density calculations of the electronic structure as a function of temperature T and applied magnetic field H are presented for FeSi. The small band gap (6 mRy) makes FeSi change from being semiconducting at low T to being metallic at moderate T, and the exchange enhancement shows strong variations with T and H. An unusual situation, when a local field has closed the gap, is favorable for additional enhancement and spin fluctuations. Low-T properties are understood from mean-field calculations based on the band structure, but spin fluctuations have to be invoked to describe properties for T larger than about 200 K.

  • Received 17 January 1995

DOI:https://doi.org/10.1103/PhysRevB.51.11106

©1995 American Physical Society

Authors & Affiliations

T. Jarlborg

  • Département de Physique de la Matière Condensée, University of Geneva, 24 Quai Ernest Ansermet, CH-1211 Geneva 4, Switzerland

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Issue

Vol. 51, Iss. 16 — 15 April 1995

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