Abstract
A systematic study of implantation in cupric and cuprous oxide films has been reported. The CuO and O films having excellent stoichiometry were prepared by the technique of laser ablation. The phases formed in the implanted and thermally annealed samples were characterized by Mössbauer spectroscopy and glancing angle x-ray diffraction. For the as-implanted CuO films the , ,β-, and O phases are detected. The same phases are present in the O-implanted films with some O⋅FeO units, metallic Cu atoms, and spinel in addition. Annealing at 400 °C under argon atmosphere produces in both the cases a strong increase of the and β- phases at the expense of the phase. This latter phase completely vanishes after annealing at 500 °C and new phases, namely α- and small iron clusters appear. The amount of the phase continues to increase after annealing at 500 and 600 °C, whereas decreases. The α- contribution disappears after annealing at 600 °C.
- Received 22 June 1994
DOI:https://doi.org/10.1103/PhysRevB.50.9743
©1994 American Physical Society