Abstract
We study Raman scattering by spin flips of acceptor-bound holes in p-type GaAs/As multiple quantum wells in normal and tilted magnetic fields. It is shown that different mechanisms are responsible for the scattering under excitation in resonance with the following complexes; exciton bound to neutral acceptor (X) and a localized exciton neighboring as a neutral acceptor. It is demonstrated that in the Faraday backscattering geometry the X-mediated scattering process can be considered as a double spin flip because it includes an acoustic-photon-induced spin flip of an electron in the photocreated X complex. In tilted magnetic fields an additional satellite line X’ appears in the Raman spectrum due to the Zeeman interaction of the electron spin with the in-plane field component. The neutral-acceptor and electron g factors are directly measured as a function of the quantum-well width. Two other lines of the X-related scattering are attributed to the bound-hole interlevel transitions ±3/2→∓1/2, which allow the determination of the interlevel splitting and an analysis of its inhomogeneous broadening induced by fluctuations in the well thickness.
- Received 18 March 1994
DOI:https://doi.org/10.1103/PhysRevB.50.2510
©1994 American Physical Society